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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STOP 1200V DIE
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 20A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The NGTD20T120F2WP is a silicon IGBT die manufactured by onsemi, utilizing trench field-stop technology. It features a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 20 A. The device exhibits a maximum collector-emitter saturation voltage of 2.4 V at 20 A with a 15 V gate drive. It supports a pulse collector current of 100 A and operates within a junction temperature range of -55°C to 175°C. Packaged as a bare die in bulk format, it is designed for surface-mount integration into power modules.
Feature Summary
- Employs trench field-stop architecture for optimized switching performance
- Designed as a bare die for custom module assembly
- Supports high-temperature operation up to 175°C junction temperature
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency inverters
Procurement Notes
This component is officially listed as End-of-Life (EOL) by the manufacturer. Verification of final purchase orders must account for discontinuation status. Buyers should confirm availability through authorized distributors or secondary markets, noting that standard supply channels may no longer support new orders. Compliance documentation such as RoHS status remains available for reference.
Selection Notes
Engineers selecting this part must recognize its status as a discontinued item. Design-in decisions should prioritize alternative components from the same family or newer generations that offer equivalent electrical specifications. Compatibility checks regarding package footprint and thermal characteristics are essential when transitioning from this bare die to modern module solutions.
Part Context
The NGTD20T120F2WP belongs to the NGTD20 series of trench field-stop IGBTs from onsemi. This series targets high-efficiency power conversion applications. As a bare die product, it serves as a foundational semiconductor element for manufacturers assembling custom power modules rather than end-users requiring discrete packaged components.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the EOL status, engineers should consult onsemi's official replacement guides or datasheets for updated series offerings that match the 1200V/20A specification profile.
