NGTD28T65F2SWK

Overview

The NGTD28T65F2SWK is a silicon Insulated Gate Bipolar Transistor (IGBT) die manufactured by onsemi. It features a Trench Field Stop technology architecture designed for high-efficiency power switching applications. The component is rated for a maximum collector-emitter voltage of 650V and supports a continuous collector current of 75A. This bare die device utilizes an FS2 package configuration, intended for integration into custom power modules or discrete assemblies where direct die attachment is required.

Feature Summary

• Utilizes Trench Field Stop technology for optimized switching performance
• Designed as a bare die component for flexible module integration
• Supports high current handling capabilities within a compact footprint

Applications

• High-frequency power conversion circuits
• Industrial motor drive inverters
• Custom power module assembly

Procurement Notes

This component is listed as obsolete or not actively sold in certain regions. Verify availability through authorized distributors or secondary market channels. Ensure that the sourcing channel provides valid traceability and authenticity documentation, as this is a specialized bare die product requiring careful handling during procurement and storage to prevent electrostatic discharge damage.

Selection Notes

Select this part only if the design requires a bare IGBT die rather than a packaged transistor. Confirm that the PCB or substrate layout supports direct die attachment and thermal management suitable for 75A operation. Verify that the gate drive circuitry matches the electrical characteristics of the Trench Field Stop technology. Consider alternative active parts if packaging simplicity is preferred over custom module integration.

Part Context

This device belongs to the broader category of onsemi IGBT transistors, specifically those utilizing trench field stop architectures. It is distinct from packaged modules, serving as a fundamental building block for power electronics designers who require control over packaging materials and thermal interfaces. The series focuses on balancing conduction losses with switching speed for efficient power processing.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. As the component is marked as obsolete, engineers should consult official obsolescence notices or contact onsemi directly for recommended next-generation replacements that match the 650V/75A specification and FS2 form factor.