NGTG12N60TF1G

$1.25

Description：IGBT 600V 24A 54W TO-3PF
Series：*

SKU:ab134082e8d3 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 24A 54W TO-3PF
Series：*
Mfr：onsemi
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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NGTG12N60TF1G

Overview

The NGTG12N60TF1G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a TO-3PF-3L through-hole package and utilizes silicon technology. The device has a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.4 V at 12 A, a power dissipation of 54 W, and a gate-emitter leakage current of 100 nA. It operates within a temperature range of -55°C to +175°C.

Feature Summary

High efficiency switching capability with fast transition times
Robust thermal performance in a standard TO-3PF package
Low saturation voltage for reduced conduction losses

Applications

Motor control drives
Power supply inverters
Industrial welding equipment

Procurement Notes

Verify component authenticity through authorized channels due to the prevalence of counterfeit power semiconductors. Confirm that the specific suffix matches the required datasheet version, as manufacturing updates may occur. Check RoHS compliance status directly against the latest official documentation before integration into regulated products.

Selection Notes

Select this component for applications requiring high voltage blocking and moderate current handling in a through-hole configuration. Ensure the thermal management design supports the specified 54 W power dissipation limit. Verify that the drive circuitry can provide the necessary gate voltage levels without exceeding the maximum ratings defined in the technical specifications.

Part Context

This IGBT belongs to the NGTG series from onsemi, designed for general-purpose power switching. It serves as a discrete solution for medium-power electronics where reliability and switching speed are critical. The TO-3PF package allows for direct mounting to heatsinks, facilitating efficient heat transfer in compact industrial designs.