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The NGTG30N60FLWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 30 A at 25 °C. The device utilizes a TO-247 package for through-hole mounting, with a maximum power dissipation of 180 W. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V and a gate-emitter leakage current of 100 nA. The component operates within a temperature range from -55 °C to +150 °C junction temperature.
Verify the specific suffix FLWG against official datasheets to confirm pinout and packaging details. Confirm RoHS compliance status as manufacturing processes may evolve. Check for obsolescence notices or lifecycle changes directly from onsemi documentation before finalizing procurement plans.
Select this component when a 600 V rated IGBT with 30 A continuous current capability is required. Ensure the application demands a TO-247 form factor for adequate heat sinking. Verify that the drive circuitry can support the specified gate-emitter voltage limits and switching characteristics for optimal performance.
This part belongs to onsemi's NGTG series of IGBTs, which are engineered for general-purpose power switching. The series typically offers a balance between conduction efficiency and switching speed, suitable for industrial and consumer electronics requiring reliable high-voltage handling in compact packages.
Compatible substitutes include the NGTG30N60FWG and NGTB30N60FLWG. Verify pin compatibility and exact electrical tolerances before substitution.