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The NGTG30N60FWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. The device utilizes TRENCHSTOP™ technology to achieve low conduction losses, with a typical collector-emitter saturation voltage of 1.7 V at 30 A. It is housed in a TO-247 package for through-hole mounting, supporting a power dissipation of 208 W. The component operates within a junction temperature range of -40°C to +150°C.
Verify the specific suffix against official datasheets to confirm pinout and electrical characteristics, as variations may exist. Confirm RoHS compliance status for the specific manufacturing lot. Check for obsolescence notices from onsemi prior to final design approval. Ensure sourcing channels provide authentic components to avoid counterfeit risks.
Select this component for applications requiring 600V blocking capability and moderate current handling up to 30A. Consider the thermal resistance of the TO-247 package when designing heat sinks. Evaluate switching frequency requirements against the device's turn-off energy losses specified in the datasheet curves.
This IGBT belongs to onsemi's TRENCHSTOP™ family, which combines trench gate technology for low on-state voltage with field-stop structures for efficient switching. The NGTG series is engineered for general-purpose industrial power conversion, balancing cost-effectiveness with reliable performance in medium-power scenarios.
Publicly confirmed substitutes include NGTG30N60FLWG and NGTB30N60FWG. Verify pin compatibility and exact electrical parameters before substitution.