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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 80A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
- Power - Max：535 W
- Switching Energy：3.4mJ (on), 1.1mJ (off)
- Input Type：Standard
- Gate Charge：313 nC
- Td (on/off) @ 25°C：116ns/286ns
- Test Condition：600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NGTG40N120FL2WG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing Field Stop II Trench technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C. The device supports a maximum power dissipation of 385 W and operates within a junction temperature range of -55°C to 175°C. It incorporates a co-packaged soft and fast free-wheeling diode with low forward voltage characteristics.
Feature Summary
- Field Stop II Trench construction for superior switching performance
- Integrated soft and fast co-packaged free-wheeling diode
- Optimized for high-speed switching applications
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welding Equipment
Procurement Notes
Verify the exact part number against official documentation, as the specific model NGTG40N120FL2WG may represent a variant or typo relative to the widely documented NGTB40N120FL2WG. Confirm package type, pinout, and electrical ratings directly with the manufacturer or authorized distributors before procurement to ensure compatibility with design requirements.
Selection Notes
Select this component for designs requiring robust high-voltage switching with integrated freewheeling capabilities. The Field Stop II technology offers a balance of low conduction loss and minimal switching loss. Ensure thermal management solutions support the specified 175°C maximum junction temperature and 385 W power dissipation limits under expected operating conditions.
Part Context
This IGBT belongs to onsemi's Field Stop II series, designed for cost-effective and efficient power conversion. The 'G' suffix typically denotes specific packaging or tape-and-reel configurations compared to standard tube packages like the 'B' suffix variants. It serves as a key discrete solution for medium-power inverter stages.
Replacement Considerations
Direct replacements include the NGTB40N120FL2WG, which shares identical electrical specifications but may differ in packaging format. Verify pinout compatibility and thermal resistance values when substituting between different package styles within the same electrical family.
