NGTG50N60FLWG

NGTG50N60FLWG

$2.56
  • Description:IGBT TRENCH 600V 100A TO-247-3
  • Series:-

SKU:4cc581ac0c21 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH 600V 100A TO-247-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 50A
  • Power - Max:223 W
  • Switching Energy:1.1mJ (on), 600µJ (off)
  • Input Type:Standard
  • Gate Charge:310 nC
  • Td (on/off) @ 25°C:116ns/292ns
  • Test Condition:400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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NGTG50N60FLWG

Overview

The NGTG50N60FLWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, utilizing Trench with Field Stop technology. It operates with a collector-emitter voltage of 600 V and supports a continuous collector current of 100 A at 25°C case temperature. The device features a low saturation voltage of 1.40 V to 1.85 V depending on conditions and offers a short-circuit withstand time of 5 µs. Packaged in a TO-247 (CASE 340L) housing, it provides a thermal resistance junction-to-case of 0.56 °C/W and functions within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Trench construction with Field Stop Technology for low saturation voltage
  • Optimized for high-speed switching applications with minimal switching loss
  • Robust design supporting 5 µs short-circuit capability

Applications

  • Power Factor Correction circuits
  • Solar Inverters
  • Uninterruptable Power Supply (UPS)

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Confirm that the component is lead-free as indicated by the 'G' suffix. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity and traceability of the semiconductor components.

Selection Notes

Select this IGBT for designs requiring low conduction losses and fast switching speeds in medium-power applications. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance. Consider the gate charge characteristics when designing the driver circuitry to ensure optimal switching performance and minimize total system power dissipation.

Part Context

This component belongs to the NGTG series of IGBTs from onsemi, designed for general-purpose switching applications. It shares architectural similarities with other devices in the FL family, emphasizing efficiency through trench technology. The TO-247 package is standard for high-current discrete power modules, facilitating efficient heat dissipation in industrial and consumer power electronics systems.

Replacement Considerations

Direct replacements should match the 600V rating, 100A current capacity, and TO-247 package. Verify pinout compatibility and thermal characteristics. Cross-reference with similar onsemi models like the NGTB50N60FLWG if current ratings allow, ensuring all electrical parameters meet the original design specifications.

NGTG50N60FLWGNGTG50N60FLWG
$2.56
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