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Product Detailed Parameters
- Description：NGW30T65M3DFP/SOT429-2/TO247-3
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：57 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 30A
- Power - Max：199 W
- Switching Energy：790µJ (on), 420µJ (off)
- Input Type：Standard
- Gate Charge：89 nC
- Td (on/off) @ 25°C：16ns/137ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：105 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3L
- Grade：-
- Qualification：-
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Overview
The NGW30T65M3DFPQ is a third-generation trench field-stop Insulated-Gate Bipolar Transistor (IGBT) manufactured by Nexperia. It features a collector-emitter voltage rating of 650 V and a continuous collector current of 30 A at 25 °C. The device utilizes carrier-stored trench-gate technology to achieve low conduction and switching losses, with a maximum junction temperature capability of 175 °C. It includes a fully rated soft fast reverse recovery diode and offers a short-circuit withstand time of 5 μs. Packaged in the TO-247-3L (SOT429) format, it is designed for high-voltage, high-frequency industrial power applications.
Feature Summary
- Third-generation trench field-stop IGBT technology for optimized performance
- Integrated fully rated soft fast reverse recovery diode
- Short-circuit withstand capability of 5 microseconds
- Stable parameters facilitating easy parallel operation
Applications
- Industrial motor drives and servo motors
- Power inverters for renewable energy systems
- Uninterruptible Power Supply (UPS) inverters
- EV charging converters
Procurement Notes
Verify the specific suffix 'Q' against official Nexperia documentation to confirm package variant or tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the ordering part number matches the exact electrical ratings required for the target circuit design before procurement.
Selection Notes
Select this component for designs requiring 650 V blocking voltage and moderate current handling up to 30 A. The 175 °C junction temperature rating supports high thermal stress environments. Verify that the 5 μs short-circuit withstand time aligns with the protection circuitry capabilities of the gate driver used in the application.
Part Context
This IGBT belongs to Nexperia's NGW series, which employs third-generation trench field-stop technology. This generation focuses on reducing switching losses while maintaining robust short-circuit tolerance. The series targets high-efficiency industrial power conversion, offering improved thermal performance compared to earlier planar technologies.
Replacement Considerations
Direct replacements include the NGW30T65M3DFPJ and NGW30T65M3DFP. Verify pinout compatibility and ensure the substitute part maintains the same 650 V / 30 A ratings and TO-247-3L package dimensions.
