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Product Detailed Parameters
- Description：NGW40T65H3DFP/SOT429-2/TO247-3
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：72 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：275 W
- Switching Energy：1.16mJ (on), 340µJ (off)
- Input Type：Standard
- Gate Charge：62 nC
- Td (on/off) @ 25°C：17ns/72ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：130 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3L
- Grade：-
- Qualification：-
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Overview
The NGW40T65H3DFPQ is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Nexperia. It utilizes silicon technology and features a TO-247-3 surface mount package. Key electrical parameters include a maximum collector-emitter voltage of 650 V and a continuous collector current of 160 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.69 V and a gate-emitter leakage current of 100 nA. Power dissipation is rated at 275 W, with an operating temperature range spanning from -40°C to +175°C.
Feature Summary
- Incorporates carrier storage trench gate field-stop structure combined with third-generation technology for enhanced performance.
Applications
- Motor control systems
- Power supplies
- Renewable energy applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Ensure the specific suffix matches design requirements. Check for obsolescence notices or lifecycle changes before finalizing procurement plans.
Selection Notes
Select this IGBT based on its 650 V blocking capability and 160 A current rating. Consider the TO-247-3 package for thermal management needs. Evaluate the 1.69 V saturation voltage against system efficiency targets. Verify compatibility with required gate drive voltages within the 20 V limit.
Part Context
This component belongs to the Nexperia NGW series of trench gate field-stop IGBTs. These devices integrate advanced semiconductor structures to optimize switching losses and conduction characteristics. The series is designed for high-efficiency power conversion applications requiring robust performance under demanding electrical conditions.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence. Ensure thermal resistance and package dimensions match existing board layouts before implementing any replacement strategy.
