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Product Detailed Parameters
- Description：NGW40T65H3DHP/SOT429-2/TO247-3
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：72 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：275 W
- Switching Energy：1.02mJ (on), 340µJ (off)
- Input Type：Standard
- Gate Charge：61 nC
- Td (on/off) @ 25°C：17ns/76ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：96 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3L
- Grade：-
- Qualification：-
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Overview
The NGW40T65H3DHPQ is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Nexperia. It utilizes silicon technology and features a TO-247-3 surface mount package. Key electrical parameters include a maximum collector-emitter voltage of 650 V, a continuous collector current of 72 A at 25°C, and a peak collector current of 160 A. The device exhibits a collector-emitter saturation voltage of 1.69 V and a gate-emitter maximum voltage of 20 V. Power dissipation is rated at 275 W, with an operating temperature range from -40°C to +175°C.
Feature Summary
- Incorporates carrier storage trench gate field-stop structure combined with third-generation technology for enhanced performance.
Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency welding equipment
Procurement Notes
Verify component authenticity through official Nexperia channels or authorized distributors. Confirm RoHS compliance status via the latest datasheet. Check for specific ordering suffixes that may indicate packaging variations. Ensure supply chain stability as availability may fluctuate based on factory production schedules.
Selection Notes
Select this IGBT for applications requiring high voltage blocking and robust thermal performance in a compact SMD form factor. Evaluate the 1.69 V saturation voltage against system efficiency targets. Consider the 160 A peak current capability for transient load conditions. Verify compatibility with TO-247-3 mounting constraints and thermal management requirements.
Part Context
This component belongs to the Nexperia NGW series of trench field-stop IGBTs. These devices are designed for medium-power switching applications. The 'H3' designation typically indicates specific internal cell architecture optimizations compared to standard variants within the same voltage and current class.
Replacement Considerations
Direct replacements must match the 650 V rating, 72 A continuous current, and TO-247-3 package. Verify pinout compatibility and saturation voltage characteristics. Cross-reference with other Nexperia NGW series parts or equivalent industry-standard IGBTs offering similar thermal and electrical specifications.
