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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 72A TO-247
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：72 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
- Power - Max：283 W
- Switching Energy：1.05mJ (on), 520µJ (off)
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：22ns/185ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：55 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3L
- Grade：-
- Qualification：-
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Overview
The NGW40T65M3DFPQ is a third-generation trench field-stop Insulated-Gate Bipolar Transistor (IGBT) with an integrated silicon diode, manufactured by Nexperia. It operates in the TO-247-3 package and supports a collector-emitter voltage of 650 V with a continuous collector current of 40 A at 25 °C case temperature. The device features optimized turn-off losses and a short-circuit withstand time of 5 μs. It is rated for a maximum junction temperature of 175 °C and includes a fully rated soft fast reverse recovery diode.
Feature Summary
- Third-generation carrier stored trench-gate and field-stop structure
- Optimized IGBT turn-off switching losses
- Stable parameters facilitating easy parallel operation
- HV-H3TRB qualified reliability
Applications
- Motor drives for industrial and consumer appliances
- Servo motors operating between 5-20 kW for robotics and elevators
- Uninterruptible Power Supply (UPS) inverters
- EV charging converters
- Induction heating and welding systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging variations or regional distribution constraints. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement specifications.
Selection Notes
Select this component for high-voltage, high-frequency hard-switching applications requiring robust short-circuit protection. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values under expected load conditions.
Part Context
This part belongs to Nexperia's 650 V IGBT family utilizing advanced third-generation technology. It complements their portfolio of power semiconductors designed for electrification and renewable energy systems, offering a balance of high power density and reliability.
Replacement Considerations
Consult the official Nexperia datasheet for verified substitute part numbers within the same product family that match pinout and electrical characteristics.
