NJVMJD128T4G

$1.01

Description：TRANS PNP DARL 120V 8A DPAK
Series：-

SKU:34f8d19608c8 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

NJVMJD128T4G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP DARL 120V 8A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NJVMJD128T4G

Description：TRANS PNP DARL 120V 8A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP - Darlington
Current - Collector (Ic) (Max)：8:00 AM
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：4V @ 80mA, 8A
Current - Collector Cutoff (Max)：5mA
DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 4A, 4V
Power - Max：1.75 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：DPAK
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for NJVMJD128T4G

NJVMJD128T4G

Single Bipolar Transistors Overview

The NJVMJD128T4G is a single NPN complementary Darlington power transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 8 A. The device is housed in a DPAK (TO-252) surface-mount package, providing a thermal resistance suitable for high-power applications. With a transition frequency of 3 MHz and a maximum power dissipation of 75 W, it supports robust switching performance. The component operates within a junction temperature range of -65°C to +150°C and meets automotive qualification standards.

Single Bipolar Transistors Feature Summary

High-current capability with an 8 A continuous collector current rating
Complementary Darlington configuration for efficient drive requirements
Automotive-grade reliability certified under AEC-Q101 standards
Surface-mount DPAK packaging optimized for thermal management

Single Bipolar Transistors Applications

Automotive lighting control circuits
General-purpose power switching applications
Industrial load driving systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix T4G against the official onsemi datasheet to confirm the tape-and-reel packaging format and lead-free composition. Ensure the ordering part number matches the exact electrical specifications required for the target application circuit design.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high current gain and robust switching capabilities in a compact surface-mount form factor. Consider the 80 V breakdown voltage and 8 A current limits to ensure adequate headroom for the intended load conditions and thermal environment.

Single Bipolar Transistors Part Context

This part belongs to the MJD series of complementary Darlington power transistors from onsemi. It serves as the NPN counterpart to PNP variants within the same family, designed for use in push-pull output stages and motor control interfaces where high current handling is essential.