NJVMJD45H11G

Single Bipolar Transistors Overview

The NJVMJD45H11G is a PNP silicon power transistor manufactured by onsemi, designed for surface mount applications in the DPAK (TO-252) package. It features an 80 V collector-emitter voltage rating and supports continuous collector currents up to 8 A. The device offers a gain-bandwidth product of 90 MHz and low saturation voltages. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• AEC-Q101 qualified with PPAP capability for automotive reliability requirements
• Low collector-emitter saturation voltage for efficient switching performance
• Fast switching speeds suitable for high-frequency driver stages
• Complementary pairing with NPN MJD44H11 simplifies circuit design

Single Bipolar Transistors Applications

• Output or driver stages in switching regulators
• Power converter circuits
• General-purpose linear and switching applications
• Power amplifier output stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required packaging format, such as rail or tape and reel quantities. Confirm that the component meets the necessary automotive qualification standards if used in vehicle electronics. Ensure the procurement source provides valid traceability documentation consistent with the manufacturer's specifications.

Single Bipolar Transistors Selection Notes

Select this component when a surface-mount PNP transistor with high current handling and fast switching characteristics is required. It serves as a direct replacement for legacy through-hole devices like the D45H series while offering improved thermal management via the DPAK footprint. Consider the complementary MJD44H11 for matched pair designs.

Single Bipolar Transistors Part Context

This part belongs to the MJD45H11 family of complementary power transistors from onsemi. It utilizes low voltage multi epitaxial planar technology. The NJV prefix indicates manufacturing at a specific site with unique control change requirements, distinguishing it from standard commercial variants while maintaining electrical equivalence.

Single Bipolar Transistors Replacement Considerations

MJD45H11G

Single Bipolar Transistors FAQ

What is the maximum peak collector current?

The maximum peak collector current (ICM) is 16 A.

Is this component RoHS compliant?

Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case (RθJC) is 6.25 °C/W.