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NP82N06NLG-S18-AY is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH 60V 82A TO262. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NP82N06NLG-S18-AY
- Description：MOSFET N-CH 60V 82A TO262
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：7.4mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：160 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8550 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta), 143W (Tc)
- Operating Temperature：175°C
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-262
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for NP82N06NLG-S18-AY
Single FETs, MOSFETs Overview
The NP82N06NLG-S18-AY is an N-channel MOSFET designed for high-current switching applications. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 82 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 7.4 mΩ at Vgs = 10 V and Id = 41 A. Avalanche energy rating (Eas) is specified at 441 mJ. The component is housed in a TO-262 package with pure tin lead finish, supplied in tubes of 50 units.
Single FETs, MOSFETs Feature Summary
- Optimized for high-current switching operations
- Low on-resistance for efficient power handling
- Robust avalanche energy capability
Single FETs, MOSFETs Applications
- High-current DC-DC converters
- Motor control circuits
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix S18-AY to confirm the tube packaging configuration containing 50 pieces per tube. Ensure compatibility with TO-262 mounting requirements. Confirm RoHS3 compliance status as indicated in supplier documentation. Cross-reference the manufacturer part number against official Renesas databases to validate active status and availability before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V N-channel MOSFET with high current capacity is required. The low Rds(on) value supports efficiency in power conversion. Consider the TO-262 package for thermal management needs. Verify that the 82 A continuous drain current rating aligns with the application's peak and steady-state load requirements.
Single FETs, MOSFETs Part Context
This part belongs to Renesas' Power MOSFETs for Automotive and Industrial lines. It complements other N-channel devices in the portfolio. The series focuses on reliability and performance in demanding environments. Renesas provides design resources and support for integrating these components into automotive and industrial systems.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the NP82N06MLG/NLG family. Verify pinout and electrical parameters match exactly. Consult official cross-reference lists for approved alternatives.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
