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Product Detailed Parameters
- Description：RF MOSFET HEMT 28V 8SOIC
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tube
- Technology：HEMT
- Frequency：0Hz ~ 4GHz
- Gain：13dB
- Voltage - Test：28 V
- Current Rating (Amps)：9.5A
- Noise Figure：-
- Current - Test：350 mA
- Power - Output：37dBm
- Voltage - Rated：100 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package：8-SOIC-EP
- Configuration：-
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Overview
The NPT1004D is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for DC to 4 GHz operation. It delivers 45 W of continuous wave output power at the P3dB compression point with a small signal gain of 13.5 dB and 55% drain efficiency at 28 V. The device supports linear applications including OFDM and operates within a junction temperature range up to 200°C. Packaged in a thermally enhanced surface-mount SOIC format, it features an exposed paddle for RF and DC grounding.
Feature Summary
- Optimized for pulsed, WiMAX, W-CDMA, LTE, and light thermal load applications across DC to 4 GHz
- Thermally-enhanced surface mount package with high reliability gold metallization process
- Supports CW, pulsed, and linear operation modes
- Subject to 100% RF testing
Applications
- Defense Communications
- Land Mobile Radio
- Avionics
- Wireless Infrastructure
- VHF/UHF/L/S-Band Radar
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current documentation before procurement. The datasheet lists tube and reel packaging options; confirm the required quantity matches the available configuration. Ensure static discharge precautions are observed during handling due to electrostatic sensitivity. Confirm RoHS compliance status aligns with project requirements.
Selection Notes
Select this component for designs requiring high linearity and power density in the sub-4 GHz spectrum. Evaluate thermal management strategies carefully, as the exposed pad requires a low thermal resistance path to ground. Verify impedance matching networks against the provided optimum impedance characteristics for both CW and OFDM performance targets.
Part Context
This part belongs to MACOM's portfolio of GaN power transistors engineered for broadband RF applications. It utilizes silicon-based GaN technology to provide robust performance in wireless infrastructure and radar systems. The device integrates high electron mobility transistor architecture to support efficient power amplification in compact surface-mount packages.
Replacement Considerations
No public confirmed substitute part numbers are documented in the source material.
FAQ
What is the maximum junction temperature for sustained operation?
Operating at nominal conditions with a junction temperature less than or equal to 200°C ensures an MTTF greater than 1 x 10^6 hours.
How must the exposed paddle be connected?
The exposed pad centered on the package bottom must be connected to RF and DC ground and must provide a low thermal resistance heat path.
Is the device suitable for medical applications?
No, MACOM products are not intended for use in medical, lifesaving, or life-sustaining applications.
