NPT2019

Overview

The NPT2019 is a GaN bias module designed for high-voltage RF power transistor applications. It operates with a positive drain supply voltage range of 0 to 6000 V and a gate supply voltage of 48 V. The module provides a peak gate current capability of 2500 mA and an enable supply current of 25 mA. It features a propagation delay of 16 ns and is housed in a compact 3 x 6 mm DFN-14 package.

Feature Summary

• Supports ultra-high voltage operation up to 6000 V for advanced GaN HEMT biasing
• Delivers high peak gate current to ensure rapid switching performance
• Compact surface-mount footprint facilitates integration into dense PCB layouts

Applications

• Biasing high-power GaN RF transistors in radar systems
• Power supply modules for electronic warfare equipment
• High-voltage driver circuits for communication infrastructure

Procurement Notes

Verify the specific revision level and pinout configuration against the latest official MACOM datasheet before finalizing design-in. Confirm that the 6000 V rating aligns with the target transistor's breakdown requirements. Ensure thermal management strategies account for the DFN-14 package constraints during high-current operation.

Selection Notes

Select this module when system architecture requires independent control of ultra-high drain voltages combined with fast gate drive capabilities. The low propagation delay supports high-frequency pulse applications. Evaluate the 2500 mA peak gate current against the total gate charge requirements of the connected GaN device to ensure adequate switching speed.

Part Context

This component belongs to MACOM’s portfolio of specialized bias solutions for Gallium Nitride technology. It complements their discrete transistors and modules by providing the necessary high-voltage control interface. The product line addresses the unique electrical demands of wide-bandgap semiconductors in demanding RF environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.