NSDEMP11XV6T1

Overview

The NSDEMP11XV6T1 is a common anode quad array switching diode designed for ultra high speed applications. It features a maximum reverse voltage of 80 Vdc and a forward current rating of 100 mAdc. The device exhibits a peak reverse recovery time of 4.0 ns and a diode capacitance of 3.5 pF at 6.0 V. Housed in the SOT-563 package, it supports a junction temperature range from -55°C to +150°C with a total device dissipation of 357 mW.

Feature Summary

• Ultra high speed switching capability with fast reverse recovery time
• Low diode capacitance for minimal signal interference
• Common anode quad configuration within a compact surface mount package

Applications

• High frequency signal processing circuits
• RF detection and mixing applications
• Ultra fast logic gate implementations

Procurement Notes

Verify the specific ordering suffix (T1 vs T5) against the required tape and reel quantity before procurement. Confirm that the component meets Pb-Free requirements if mandated by project specifications. Ensure the SOT-563 footprint matches the design layout constraints precisely.

Selection Notes

Select this component when board space is limited due to its compact SOT-563 packaging. Choose this part for designs requiring multiple independent switching paths sharing a common anode. Evaluate thermal derating requirements carefully as power dissipation is limited to 357 mW.

Part Context

This device belongs to onsemi's epitaxial planar diode family, optimized for high-speed performance. It utilizes a quad array architecture to consolidate four switching elements into a single surface-mount package. The technology supports low-power applications where physical size and switching velocity are critical design parameters.

Replacement Considerations

NSDEMP11XV6T5 serves as a direct functional substitute differing only in reel quantity.