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Product Detailed Parameters
- Description：DIODE ARRAY GP 80V 100MA SOT-563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：2 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：80 V
- Current - Average Rectified (Io) (per Diode)：100mA (DC)
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：100 nA @ 70 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The NSDEMP11XV6T1G is a common anode quad array switching diode manufactured by onsemi. It is housed in the SOT-563 package designed for low power surface mount applications where board space is limited. The device features fast reverse recovery time and low junction capacitance, making it suitable for ultra high speed switching applications. Maximum ratings include a reverse voltage of 80 Vdc, forward current of 100 mAdc, and peak forward surge current of 2.0 Adc. Electrical characteristics specify a maximum reverse recovery time of 4.0 ns and a maximum diode capacitance of 3.5 pF at 1.0 MHz.
Feature Summary
- Common Anode Quad Array configuration
- Fast Reverse Recovery Time
- Low Junction Capacitance
Applications
- Ultra high speed switching applications
- Low power surface mount applications
- Board space constrained designs
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity and tape & reel specifications. Ensure compliance with RoHS requirements as these are Pb-Free devices. Check thermal derating curves for operation above 25°C ambient temperature. Confirm package dimensions match the SOT-563 outline before integration into PCB layouts.
Selection Notes
Select this component when ultra high speed switching performance is required within a compact footprint. The common anode quad configuration reduces component count compared to discrete diodes. Evaluate thermal resistance values if multiple junctions are heated simultaneously. Consider the low capacitance specification for high-frequency signal integrity requirements.
Part Context
This part belongs to the NSDEMP11 series of epitaxial planar quad diodes. It shares the SOT-563 package form factor with other small signal components from onsemi. The device is designed to replace older technologies requiring faster switching speeds in minimal space.
Replacement Considerations
NSDEMP11XV6T5
FAQ
What is the maximum reverse recovery time specified for this device?
The maximum reverse recovery time (trr) is 4.0 ns under test conditions of IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, and Irr = 0.1 IR.
What is the package type for the NSDEMP11XV6T1G?
The device is housed in the SOT-563 package, which is a plastic surface mount case designed for low power applications.
Is this device lead-free?
Yes, the NSDEMP11XV6T1G is a Pb-Free device. The SOT-563 package is inherently Pb-Free.
