RF Diode NSDP301MX3T5G product image

NSDP301MX3T5G

$0.47
  • Description:RF DIODE PIN 80V 2X3DFN
  • Series:-

SKU:6e19140d454a Category: Brand:

  
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NSDP301MX3T5G is listed in the RF Diode range at ChipApex. The manufacturer field lists onsemi. Its product description is RF DIODE PIN 80V 2X3DFN. Review the specifications below when checking this part for your BOM.

RF Diode specifications for NSDP301MX3T5G

  • Description:RF DIODE PIN 80V 2X3DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):80V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.33pF @ 0V, 1MHz
  • Resistance @ If, F:1.3Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Package / Case:0201 (0603 Metric)
  • Supplier Device Package:2-X3DFN (0.6x0.3) (0201)
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for NSDP301MX3T5G

NSDP301MX3T5G

RF Diode Overview

The NSDP301MX3T5G is a PIN diode manufactured by onsemi, designed for high-frequency applications. It features a low series resistance and small capacitance, making it suitable for attenuating input signals above 10 dBm. The device utilizes an X2DFN2 (1006) package with dimensions of 1.0 x 0.6 mm. It operates within a temperature range defined by standard commercial specifications and is RoHS compliant. This component is often paired with Schottky barrier diodes in limiter circuits to provide effective signal attenuation and protection in RF systems.

RF Diode Feature Summary

  • Low series resistance for efficient signal handling
  • Small capacitance optimized for high-frequency performance
  • Compact X2DFN2 surface-mount package design

RF Diode Applications

  • Diode limiter circuits for RF signal attenuation
  • High-frequency signal processing systems
  • Input protection stages in communication equipment

RF Diode Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required environmental standards for your specific application environment before finalizing procurement decisions.

RF Diode Selection Notes

Select this component when low parasitic capacitance and minimal insertion loss are critical for high-frequency operation. Ensure the circuit design accommodates the thermal characteristics associated with the small surface-mount footprint and verify compatibility with adjacent Schottky diodes if used in limiter configurations.

RF Diode Part Context

This part belongs to onsemi's portfolio of high-frequency semiconductor devices. It is specifically engineered for RF applications requiring precise signal control. The device complements other small-signal diodes in the manufacturer's lineup, providing a standardized solution for modern compact electronic designs.

RF Diode Replacement Considerations

Direct substitutes should match the X2DFN2 package and similar electrical parameters for capacitance and series resistance. Verify pinout compatibility and thermal performance before implementing any alternative components in existing designs.

NSDP301MX3T5GNSDP301MX3T5G
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