NSF060120L3A0Q

$12.99

Description：SICFET N-CH 1200V 37A TO247-3
Series：-
Mfr：Nexperia USA Inc.
Package：Tube

SKU:419d0ae70a6f Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

NSF060120L3A0Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is SICFET N-CH 1200V 37A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NSF060120L3A0Q

Description：SICFET N-CH 1200V 37A TO247-3
Series：-
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V, 18V
Rds On (Max) @ Id, Vgs：90mOhm @ 20A, 18V
Vgs(th) (Max) @ Id：2.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：57 nC @ 18 V
Vgs (Max)：+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1335 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：183W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3L
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for NSF060120L3A0Q

NSF060120L3A0Q

Single FETs, MOSFETs Overview

The NSF060120L3A0 is a Silicon Carbide (SiC) N-channel power MOSFET rated for 1200 V drain-source voltage and featuring a typical on-state resistance of 60 mΩ at 25 °C. It utilizes a TO-247-3L plastic package designed for through-hole PCB mounting with heatsink attachment. The device supports a continuous drain current of 37 A at 25 °C case temperature, reducing to 26 A at 100 °C. It operates within a junction temperature range of -55 °C to 175 °C and includes an integrated Kelvin source pin for optimized switching performance.

Single FETs, MOSFETs Feature Summary

Excellent RDSon temperature stability
Very low switching losses
Fast reverse recovery
Temperature independent turn-off switching losses

Single FETs, MOSFETs Applications

E-vehicle charging infrastructure
Photovoltaic inverters
Switch mode power supply
Uninterruptable power supply
Motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm RoHS compliance status against the latest Nexperia documentation. Ensure gate drive voltages adhere to recommended limits: turn-on between 15 V and 18 V, and turn-off between -5 V and 0 V. Avoid operation below 13 V turn-on voltage to maintain specified performance characteristics.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring fast switching speeds and low conduction losses. Consider the thermal resistance from junction to case when designing heatsinking solutions. Evaluate the peak pulsed drain current capability against transient load requirements. Verify that the external gate resistance aligns with desired switching speed and electromagnetic interference constraints.

Single FETs, MOSFETs Part Context

This part belongs to the NSF060120 series of Silicon Carbide MOSFETs manufactured by Nexperia. These devices are engineered for high-power industrial environments where efficiency and thermal management are critical. The TO-247-3L package provides robust mechanical mounting and efficient heat dissipation capabilities suitable for demanding power electronics designs.