NSR0115CQP6T5G

Overview

The NSR0115CQP6T5G is a dual common cathode Schottky barrier diode manufactured by onsemi. It features silicon technology with a repetitive reverse voltage of 15 V and a forward current rating of 100 mA. The device exhibits a maximum forward voltage of 400 mV at the rated current. Designed for high-speed switching applications, it is housed in an SOT-963 surface-mount package.

Feature Summary

• Dual common cathode configuration for space-efficient circuit design
• Schottky barrier technology optimized for high-speed switching operations
• Silicon construction ensuring reliable performance in surface-mount applications

Applications

• High-speed switching circuits
• Surface-mount electronic assemblies requiring compact diode arrays
• Power management systems utilizing low-voltage rectification

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package integrity upon receipt to ensure solderability. Cross-reference datasheet specifications against application requirements prior to integration. Maintain proper handling procedures for surface-mount devices to prevent electrostatic discharge damage during assembly processes.

Selection Notes

Select this component when a dual common cathode Schottky diode is required for high-speed switching within a 15 V reverse voltage limit. The 100 mA forward current rating suits low-power applications. Ensure the SOT-963 package footprint aligns with the printed circuit board layout constraints.

Part Context

This part belongs to the family of dual common cathode Schottky diodes designed for efficient rectification and switching. It utilizes standard silicon technology to provide fast recovery characteristics. The specific model integrates two diodes into a single compact package to minimize board space consumption.

Replacement Considerations

Consult official substitution lists for verified equivalents. Verify electrical parameters such as voltage ratings and forward current match before replacing.