NSR2030DMXTAG

Description：DIODE ARRAY SCHOTT 30V 2A 4XDFN
Series：-

SKU:1fc186a40496 Category: Diode Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：DIODE ARRAY SCHOTT 30V 2A 4XDFN
Series：-
Mfr：onsemi
Package：Bulk
Diode Configuration：2 Independent
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：30 V
Current - Average Rectified (Io) (per Diode)：2A
Voltage - Forward (Vf) (Max) @ If：650 mV @ 2 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：25 ns
Current - Reverse Leakage @ Vr：20 µA @ 30 V
Operating Temperature - Junction：150°C
Mounting Type：Surface Mount
Package / Case：4-PowerXSFN
Supplier Device Package：4-XDFN (2x1.35)
Grade：-
Qualification：-

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NSR2030DMXTAG

Overview

The NSR2030DMXTAG is a Schottky half bridge rectifier designed for high-speed signal rectification in wireless charging applications. It features an extremely fast switching speed and low forward voltage of 0.54 V typical at 2 A input current. The device operates with a maximum reverse voltage of 30 V and supports an average rectified current of 2 A per diode. It is housed in a compact XDFN4 package (2.0 x 1.35 x 0.4 mm) suitable for space-constrained designs. The component complies with RoHS standards and is lead-free.

Feature Summary

Extremely fast switching speed optimized for high-frequency operation
Low forward voltage reduces conduction losses during rectification
Compact XDFN4 package ideal for space-constrained wireless applications

Applications

Low voltage half bridge rectification
Wireless charging systems
High-speed signal rectification

Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel quantity matches your production requirements. Confirm that the XDFN4 package dimensions align with your PCB footprint constraints. Ensure compatibility with surface-mount assembly processes. Check for any recent product change notices regarding material composition or manufacturing location updates.

Selection Notes

Select this component when low forward voltage and fast switching are critical for efficiency in wireless power transfer circuits. The 30 V rating suits low-voltage applications, while the 2 A current capability handles moderate power levels. Consider the thermal performance within the small XDFN4 package for high-density layouts.

Part Context

This part belongs onsemi's discrete semiconductor portfolio, specifically within the diode arrays category. It is engineered for modern consumer electronics requiring efficient power conversion in compact form factors. The technology leverages advanced Schottky barrier materials to minimize energy loss.