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The NSS60200DMTTBG is a PNP bipolar junction transistor from onsemi's e2PowerEdge family, designed for surface-mount applications. It features a 60V collector-emitter voltage rating and a continuous collector current of 2A. The device utilizes a WDFN6 package to achieve ultra-low saturation voltage characteristics. Key electrical parameters include a maximum power dissipation of 2.27W, a transition frequency of 155MHz, and a minimum DC current gain of 80. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix to ensure the correct packaging configuration matches production requirements. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the datasheet revision date to validate parameter accuracy against current design specifications.
Select this component for designs requiring high current handling in a compact footprint with minimal voltage drop. Compare the 2A current rating and 60V breakdown against circuit demands. Evaluate the WDFN6 thermal performance against available PCB copper area for adequate heat dissipation during continuous operation.
This part belongs to the NSS60200DMT series, which focuses on low VCE(sat) performance. It complements other variants in the family that may offer different current ratings or configurations. The series targets modern mobile and industrial applications demanding high efficiency and small form factors.
Direct substitutes within the same series include NSS60200LT1G and NSS60201SMTTBG. Verify pin compatibility and package dimensions before substitution. Ensure replacement parts meet identical voltage and current specifications for circuit integrity.