Single Bipolar Transistors NSS60201LT1G product image

NSS60201LT1G

$0.54
  • Description:TRANS NPN 60V 2A SOT23-3
  • Series:-

SKU:c9bdb8d6bdc8 Category: Brand:

  
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NSS60201LT1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 2A SOT23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NSS60201LT1G

  • Description:TRANS NPN 60V 2A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:140mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1A, 2V
  • Power - Max:460 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for NSS60201LT1G

NSS60201LT1G

Single Bipolar Transistors Overview

The NSS60201LT1G is a single NPN bipolar junction transistor from onsemi’s e² PowerEdge family, housed in an SOT-23-3 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 60 V and a continuous collector current of 2 A. Key electrical parameters include a collector-base voltage (VCBO) of 140 V, an emitter-base voltage (VEBO) of 8 V, and a low collector-emitter saturation voltage of 140 mV at specified currents. The device has a power dissipation rating of 540 mW, a gain-bandwidth product (fT) of 100 MHz, and a minimum DC current gain (hFE) of 160. It operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Ultra-low saturation voltage for efficient switching
  • High current gain capability
  • Miniature surface-mount design

Single Bipolar Transistors Applications

  • Low voltage high speed switching applications
  • General purpose amplification
  • Power management circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix LT1G to confirm the SOT-23-3 package and reel packaging configuration. Ensure compatibility with RoHS directives if required by the target assembly process. Cross-reference the manufacturer datasheet for precise thermal resistance values and absolute maximum ratings to prevent overstress during operation.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with low saturation voltage is required for space-constrained designs. The SOT-23-3 package suits automated surface-mount assembly. Consider the 60 V breakdown voltage and 2 A current limit against circuit demands. Compare performance metrics with alternative packages like WDFN6 if higher power dissipation is necessary.

Single Bipolar Transistors Part Context

This part belongs to onsemi’s e² PowerEdge series, which focuses on low VCE(sat) transistors designed for modern power efficiency requirements. The series includes complementary PNP devices and variants in different packages to support diverse board layout and thermal management needs in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

Check for direct pin-compatible alternatives within the same family, such as other NSS60201 variants with different packaging. Verify that substitute parts meet or exceed the 60 V VCEO, 2 A Ic, and 140 mV VCE(sat) specifications to maintain circuit performance.

NSS60201LT1GNSS60201LT1G
$0.54
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