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Product Detailed Parameters
- Description：TRANS 2NPN 40V 200MA SOT-563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
- Power - Max：500mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The NST3904DXV6T1G is a dual PNP bipolar junction transistor manufactured by onsemi. It features a maximum DC collector current of 200 mA and a collector-emitter voltage (VCEO) of 40 V. The device operates within a temperature range of -55°C to +150°C. Key electrical parameters include a collector-base voltage (VCBO) of 40 V, an emitter-base voltage (VEBO) of 5 V, and a collector-emitter saturation voltage of 400 mV. Power dissipation is rated at 500 mW with a gain-bandwidth product (fT) of 250 MHz. The component utilizes silicon technology and is housed in a SOT-563-6 surface-mount package.
Feature Summary
- Dual PNP configuration integrated into a compact SOT-563-6 surface-mount package for space-constrained designs.
- High thermal stability supporting operation up to +150°C junction temperature.
- Optimized switching performance with a 250 MHz gain-bandwidth product.
Applications
- General-purpose signal switching and logic interface circuits
- Low-power amplifier stages requiring dual complementary configurations
- Portable electronic devices utilizing surface-mount assembly
Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to confirm exact packaging and reel specifications. Ensure compatibility with standard SMD/SMT assembly processes. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before finalizing procurement plans.
Selection Notes
Select this component when a dual PNP configuration is required in a small footprint. Compare power dissipation ratings and saturation voltages against circuit requirements. Verify that the 40 V voltage rating meets system operating conditions. Consider the SOT-563-6 package dimensions for PCB layout constraints.
Part Context
This part belongs to the NST3904DXV6 series of dual bipolar transistors. It serves as a complementary counterpart to NPN dual transistor variants within the same family. The series is designed for general-purpose switching applications requiring high density and reliable performance in consumer electronics.
Replacement Considerations
Direct substitutes may include other dual PNP transistors in SOT-563 packages with matching 200 mA and 40 V ratings. Verify pinout compatibility and electrical parameters such as hFE and fT before substitution.
FAQ
What is the maximum power dissipation for the NST3904DXV6T1G?
The maximum power dissipation is 500 mW.
Does this component support high-temperature operation?
Yes, the maximum operating temperature is +150°C.
What is the gain-bandwidth product of this transistor?
The gain-bandwidth product (fT) is 250 MHz.
