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The NST3906DXV6T1 is a dual PNP bipolar junction transistor manufactured by onsemi, housed in a surface-mount SOT-563-6 package. It features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device exhibits a low collector-emitter saturation voltage of 400 mV and a gain-bandwidth product of 250 MHz. Power dissipation is rated at 500 mW, with a minimum DC current gain (hFE) of 60. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix to ensure the correct tape-and-reel packaging quantity matches production requirements. Confirm that the SOT-563-6 footprint aligns with the target PCB layout. Check for RoHS compliance documentation if environmental regulations apply to the final assembly process.
Select this component when a dual PNP configuration is required in a small outline package. Ensure the 40 V voltage rating and 200 mA current capacity exceed the maximum circuit demands. Consider the 500 mW power dissipation limit relative to the thermal environment and heat sinking capabilities of the application.
This device is part of the NST3906DXV6 series, designed as a spin-off from popular three-leaded devices like the SOT-23 variants. It provides a dual-transistor solution ideal for applications where space is limited but multiple switching or amplification functions are needed within a single component footprint.
Direct substitutes include other dual PNP transistors in SOT-563 packages such as the BC857D or similar onsemi dual PNP offerings. Verify pinout compatibility and electrical parameters before substitution.