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The NST65011MW6T1G is a dual matched NPN general-purpose transistor housed in an ultra-small SOT-363 package. It features a collector-emitter voltage (VCEO) of 65 V and a continuous collector current (IC) of 100 mA. The device offers a DC current gain (hFE) ranging from 150 to 500 at IC = 10 mA, with a current-gain-bandwidth product (fT) of 100 MHz. Key matching specifications include current gain matching to 10% and base-emitter voltage matching to 2 mV. Total device dissipation is 380 mW per device on an FR-5 board at 25°C ambient temperature.
Verify the specific ordering suffix T1G corresponds to the tape and reel packaging configuration containing 3,000 units per reel. Confirm that the NSV prefix variant meets automotive site and control change requirements if AEC-Q101 qualification is necessary for the target application environment.
Select this component when space constraints require an SOT-363 package but precise transistor matching is critical for circuit performance. Ensure the 65 V collector-emitter voltage rating exceeds the maximum operating voltage. Verify that the 100 mA continuous current limit accommodates peak load requirements without exceeding thermal dissipation limits.
This part is a dual NPN matched pair within the NST65011MW6 series. It serves as the complementary counterpart to the PNP equivalent NST65010MW6T1G. Both devices share the same ultra-small form factor, enabling compact design solutions for battery-powered and portable electronic equipment requiring matched transistor pairs.
Direct drop-in replacements are available among standard single NPN transistors if matching precision is not required. For complementary designs, the NST65010MW6T1G provides the PNP equivalent in the same package.