NST857BDP6T5G

Overview

The NST857BDP6T5G is a dual PNP bipolar junction transistor array manufactured by onsemi. It features a maximum collector-emitter voltage of 45V and a continuous collector current of 100mA per transistor. The device operates with a transition frequency of 100MHz and has a maximum power dissipation of 350mW. DC current gain is specified at a minimum of 220 when tested at 2mA collector current and 5V collector-emitter voltage. The saturation voltage is limited to 700mV under conditions of 5mA base current and 100mA collector current. The component is housed in an SOT-963 surface-mount package and supports a junction temperature range from -55°C to 150°C.

Feature Summary

• Dual PNP configuration within a single compact SOT-963 package for space-constrained designs
• High-speed switching capability supported by a 100MHz transition frequency
• Low saturation voltage characteristic suitable for efficient signal switching applications

Applications

• General-purpose signal switching circuits
• Logic interface buffering between different voltage domains
• Small-signal amplification stages requiring matched dual transistors

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material declarations directly from the datasheet before integration into environmentally regulated assemblies. Cross-reference the supplier part number with the manufacturer's active product list to confirm current availability and lifecycle status.

Selection Notes

Select this component when a matched pair of PNP transistors is required in a small surface-mount footprint. Ensure the design voltage does not exceed the 45V collector-emitter rating and that thermal management accommodates the 350mW power dissipation limit. Verify that the required current gain meets the minimum specification of 220 at the intended operating point.

Part Context

This device belongs to the NST857 series of dual bipolar transistor arrays produced by onsemi. The series provides matched electrical characteristics for both transistors within the package, ensuring consistent performance in differential or push-pull configurations. The SOT-963 package offers a compact solution compared to discrete dual-transistor implementations.

Replacement Considerations

The NST857BF3T5G is a single PNP transistor variant within the same family, offering similar electrical parameters but in a different package configuration. Designers must account for the difference between single and dual transistor configurations when substituting components.