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The NSV60101DMTWTBG is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 2A. The device operates with a transition frequency of 140MHz and dissipates up to 510mW of power. Packaged in a compact 6-HUSON (2x2mm) surface-mount configuration, it meets AEC-Q100 automotive qualification standards and supports junction temperatures up to 150°C.
Verify the complete part number including the suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets specific project requirements for temperature range and package dimensions before finalizing procurement plans.
Select this component when a dual NPN topology is required within an automotive environment. Ensure the design accommodates the 6-HUSON footprint and thermal dissipation limits. Verify compatibility with system voltage levels not exceeding 60V and current demands within the 2A limit.
This part belongs to the PBSS4260 series of high-performance dual NPN transistors. It shares core electrical characteristics with variants like the PBSS4260PAN,115 but may differ in packaging or reel specifications. The series is designed for robust performance in demanding electronic applications.
Direct substitutes include the PBSS4260PAN,115 from Nexperia, which offers identical electrical parameters and pinout compatibility. Verify mechanical fit and thermal performance when cross-referencing with other dual NPN arrays in the same voltage and current class.