NSV60200DMTWTBG

Overview

The NSV60200DMTWTBG is a dual PNP low VCE(sat) transistor from onsemi's e2PowerEdge family, housed in a WDFNW6 package. It features a collector-emitter voltage of 60 V and continuous collector current of 2 A per device. The component offers high DC current gain (minimum 40 at 2 A) and ultra-low saturation voltage for efficient energy control. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual configuration with wettable flank package for optimal automated optical inspection
• AEC-Q101 qualified and PPAP capable for automotive applications
• High current gain capability allows direct driving from PMU control outputs

Applications

• DC-DC converters
• LED lighting power management
• Automotive airbag deployment systems
• Instrument clusters

Procurement Notes

Verify the specific ordering suffix WTBG indicates the wettable flank variant required for your assembly process. Confirm that the NSV prefix meets your site-specific quality and control change requirements. Ensure the WDFNW6 footprint matches your PCB design guidelines before finalizing procurement.

Selection Notes

Select this component for low-voltage, high-speed switching applications requiring affordable efficient energy control. The high linear gain makes it suitable for analog amplifier circuits. Verify thermal dissipation requirements against the junction-to-ambient resistance values provided in the datasheet for single or dual operation modes.

Part Context

This part belongs to onsemi's e2PowerEdge family of miniature surface mount devices. These transistors are designed to provide ultra-low saturation voltage and high current gain. The family targets applications where efficient energy control is critical, bridging the gap between standard signal transistors and power MOSFETs.

Replacement Considerations

NSS60200DMTTBG