Single Bipolar Transistors NSV60601MZ4T3G product image

NSV60601MZ4T3G

$0.84
  • Description:TRANS NPN 60V 6A SOT223
  • Series:-

SKU:715a4e78fdb3 Category: Brand:

  
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NSV60601MZ4T3G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 6A SOT223. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NSV60601MZ4T3G

  • Description:TRANS NPN 60V 6A SOT223
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):6:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 600mA, 6A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1A, 2V
  • Power - Max:800 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223 (TO-261)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for NSV60601MZ4T3G

NSV60601MZ4T3G

Single Bipolar Transistors Overview

The NSV60601MZ4T3G is a single NPN bipolar junction transistor manufactured by onsemi, designed for power switching applications. It features a maximum collector-emitter voltage (VCEO) of 60 V and a continuous collector current rating of 6 A. The device exhibits a low collector-emitter saturation voltage of 300 mV at specified currents, enhancing efficiency in saturated operation. Electrical characteristics include a collector-base voltage (VCBO) of 100 V and an emitter-base voltage (VEBO) of 6 V. The component supports a power dissipation of 2 W and operates within a temperature range of -55°C to +150°C. It is housed in a SOT-223-4 surface-mount package and meets AEC-Q100 automotive qualification standards.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for improved power efficiency
  • Automotive-grade reliability with AEC-Q100 qualification
  • High thermal stability supporting extended operating temperatures up to 150°C

Single Bipolar Transistors Applications

  • Automotive power management circuits
  • General-purpose power switching
  • Load drive applications requiring high current capability

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and manufacturing date code against official onsemi documentation to ensure compliance with project requirements. Confirm that the received components match the AEC-Q100 qualification status indicated in the datasheet. Check for any recent product change notices that may affect pinout or electrical specifications before integration into final assemblies.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with high current handling and low saturation voltage is required for automotive or industrial environments. The SOT-223-4 package offers a balance of thermal performance and board space efficiency. Consider the 60 V voltage rating and 6 A current capacity to ensure adequate headroom for the intended load conditions.

Single Bipolar Transistors Part Context

This part belongs to the NSS60601MZ4 series of low VCE(sat) NPN transistors from onsemi. The series is engineered for applications demanding efficient power control with minimal heat generation. The NSV prefix typically denotes automotive-grade variants, aligning with the AEC-Q100 certification found in this model's specifications.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for verified substitutes. Ensure any replacement maintains the SOT-223-4 footprint, 60 V/6 A ratings, and AEC-Q100 qualification if automotive use is required.

NSV60601MZ4T3GNSV60601MZ4T3G
$0.84
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