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The NSVBAV70TT1G is a dual common cathode switching diode manufactured by onsemi in an SOT-416 (SC-75) surface-mount package. It features a maximum reverse voltage of 100 Vdc and a forward current rating of 200 mAdc. The device exhibits a peak forward surge current capability of 500 mAdc and a maximum reverse recovery time of 6.0 ns. Electrical characteristics include a reverse breakdown voltage of 100 V at 100 µA, with leakage currents specified at 1.0 nAdc (100 V) and 100 nAdc (50 V). Diode capacitance is limited to 1.5 pF at 0 V reverse bias. Thermal dissipation ranges from 225 mW to 360 mW depending on board pad configuration.
Verify the NSV prefix indicates automotive qualification and specific manufacturing site controls. Confirm the SOT-416 package style matches the required footprint. Ensure compliance with RoHS and halogen-free specifications aligns with project environmental mandates. Validate that the 3000-unit tape and reel packaging meets production volume needs.
Select this component when automotive reliability standards are mandatory. The dual common cathode configuration allows for efficient space utilization in compact designs. Consider the low junction-to-ambient thermal resistance for heat management. Evaluate the 100 V reverse voltage rating against circuit operating conditions to ensure adequate safety margins.
This part belongs to the BAV70T series of dual switching diodes produced by onsemi. It shares core electrical specifications with the standard BAV70TT1G but includes the NSV prefix to denote specialized automotive-grade manufacturing controls. The series is designed for high-speed switching applications requiring robust reliability.
The BAV70TT1G serves as a direct functional replacement. Verify that the substitute lacks the NSV prefix if automotive site control is not required. Ensure the replacement maintains the same SOT-416 package dimensions and pinout configuration.