NSVBAV70TT3G

Overview

The NSVBAV70TT3G is a dual switching diode from onsemi, housed in an SOT-416 (SC-75) package. It features a reverse voltage of 100 Vdc and a forward current of 200 mAdc. The device has a peak forward surge current rating of 500 mAdc and a maximum reverse recovery time of 6.0 ns. Operating temperature ranges from -55°C to +150°C. It is AEC-Q101 qualified and PPAP capable.

Feature Summary

• AEC-Q101 qualified for automotive applications
• PPAP capable manufacturing process
• Pb-Free and RoHS compliant construction

Applications

• Automotive electronics requiring unique site control
• General purpose switching circuits
• High-speed signal processing applications

Procurement Notes

Verify the specific ordering suffix 'NSV' indicates AEC-Q101 qualification and PPAP capability as per official documentation. Confirm the package type matches the required footprint. Ensure compliance with environmental directives such as RoHS and halogen-free requirements before finalizing procurement specifications.

Selection Notes

Select this component when high-speed switching performance is required alongside automotive reliability standards. The dual configuration within a compact SOT-416 package makes it suitable for space-constrained designs. Verify thermal dissipation needs against the specified junction-to-ambient resistance values for the intended PCB layout.

Part Context

This part belongs to the BAV70T series of dual switching diodes manufactured by onsemi. The NSV prefix specifically denotes units produced under stricter automotive quality management systems. It serves as a standard discrete semiconductor solution for signal routing and protection tasks.

Replacement Considerations

Direct substitutes include BAV70TT1G and NSVBAV70TT1G, which share identical electrical characteristics but may differ in packaging quantity or specific automotive qualification status.