Single Bipolar Transistors NSVBC858CLT1G product image

NSVBC858CLT1G

$0.14
  • Description:TRANS PNP 30V 0.1A SOT23-3
  • Series:-

SKU:6231cabc7354 Category: Brand:

  
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NSVBC858CLT1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 30V 0.1A SOT23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NSVBC858CLT1G

  • Description:TRANS PNP 30V 0.1A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for NSVBC858CLT1G

NSVBC858CLT1G

Single Bipolar Transistors Overview

The NSVBC858CLT1G is a PNP silicon general-purpose transistor from the BC856ALT1G series, manufactured by onsemi. It features a collector-emitter voltage of -30 V and a continuous collector current rating of -100 mA. The device is housed in an SOT-23 (TO-236) surface-mount package with three terminals: Base, Emitter, and Collector. It operates within a junction temperature range of -55°C to +150°C and includes AEC-Q101 qualification for automotive applications.

Single Bipolar Transistors Feature Summary

  • AEC-Q101 qualified and PPAP capable for automotive use
  • Lead-free, halogen-free, and RoHS compliant construction
  • Designed for low-power surface mount applications

Single Bipolar Transistors Applications

  • General purpose amplifier circuits
  • Automotive electronic systems requiring unique site control
  • Low power surface mount signal processing

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the specific gain bin required for the application design. Confirm the presence of the NSV prefix indicates compliance with automotive quality standards and unique site requirements. Ensure the package type corresponds to the intended PCB footprint layout.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -30 V collector-emitter voltage rating is necessary. Consider the -100 mA continuous current limit for load requirements. Verify compatibility with the SOT-23 package dimensions for surface mount assembly processes.

Single Bipolar Transistors Part Context

This part belongs to the BC856ALT1G series of PNP silicon transistors. It shares the same physical package and basic electrical limits as other members of the series but differs in DC current gain specifications. The NSV prefix distinguishes it as an automotive-grade variant meeting specific supply chain controls.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include BC858ALT1G and BC858BLT1G. These parts share identical pinouts and maximum ratings but may differ in hFE gain bins. Verify gain requirements before substitution.

NSVBC858CLT1GNSVBC858CLT1G
$0.14
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