NSVDAN222T1G

NSVDAN222T1G

$0.20
  • Description:DIODE ARRAY GP 80V 100MA SC75
  • Series:-

SKU:15987042b292 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY GP 80V 100MA SC75
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 70 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SC-75, SOT-416
  • Grade:Automotive
  • Qualification:AEC-Q101

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NSVDAN222T1G

Overview

The NSVDAN222T1G is a dual switching diode manufactured by onsemi, designed for high-speed signal processing applications. It features a common cathode configuration housed in an SOT-363 (SC-88) surface-mount package. The device utilizes silicon technology and is qualified under the AEC-Q101 standard for automotive reliability. Key electrical specifications include a maximum repetitive peak reverse voltage of 75 V and a continuous forward current rating of 200 mA per element. The component supports a wide operating temperature range from -55 °C to +150 °C, ensuring stability in demanding environments.

Feature Summary

  • Dual switching diodes with common cathode configuration
  • High-speed performance suitable for signal processing
  • Automotive grade qualification via AEC-Q101 standard
  • Compact SMD packaging for space-constrained designs

Applications

  • Automotive electronic systems requiring reliable switching
  • General purpose signal processing circuits
  • High-speed data line protection

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and halogen-free requirements as stated in the datasheet. Confirm that the AEC-Q101 qualification aligns with your project's automotive reliability standards before finalizing procurement.

Selection Notes

Select this component when a compact dual diode solution is required for high-speed switching tasks. The common cathode arrangement simplifies circuit topology compared to discrete single diodes. Consider the thermal management capabilities provided by the small outline package and verify that the 75 V reverse voltage rating exceeds the maximum expected transient voltages in the application.

Part Context

This part belongs to the DAN222 series of dual switching diodes produced by onsemi. The series is engineered to replace multiple discrete components, thereby reducing board space and assembly complexity. The NSV prefix indicates specific manufacturing site or control change requirements, often associated with automotive-grade supply chains.

Replacement Considerations

Direct substitutes may include other dual common cathode switching diodes in SOT-363 packages with comparable voltage and current ratings. Verify pinout compatibility and electrical parameters such as reverse recovery time and forward voltage drop before substitution.

NSVDAN222T1GNSVDAN222T1G
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