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Product Detailed Parameters
- Description：DIODE ARRAY GP 80V 100MA SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Anode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：80 V
- Current - Average Rectified (Io) (per Diode)：100mA (DC)
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：100 nA @ 70 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
- Grade：-
- Qualification：-
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Overview
The NSVDAP222T1G is a common anode silicon epitaxial planar dual switching diode manufactured by onsemi. It is housed in the SC-75 (SOT-416) surface mount package designed for low power applications where board space is limited. The device features fast reverse recovery time and low junction capacitance, making it suitable for ultra high speed switching applications. It is qualified under AEC-Q101 standards and supports PPA requirements.
Feature Summary
- Designed for ultra high speed switching applications
- Features fast reverse recovery time and low junction capacitance
- Housed in SC-75/SOT-416 package optimized for low power surface mount use
Applications
- Ultra high speed switching circuits
- Low power surface mount applications with limited board space
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the NSV prefix indicates compliance with automotive site and control change requirements. Ensure the ordering suffix matches the required tape and reel specifications. Check for RoHS and halogen-free compliance status before integration into final assemblies.
Selection Notes
Select this component when ultra high speed switching performance is required in a compact form factor. The SC-75 package is appropriate for designs prioritizing minimal footprint. Verify thermal dissipation capabilities against application load requirements. Consider AEC-Q101 qualification if the target environment demands automotive-grade reliability standards.
Part Context
This part belongs to the DAP222 series of common anode silicon dual switching diodes. It shares electrical characteristics with the standard DAP222G but includes the NSV prefix denoting specific manufacturing site controls. The device utilizes epitaxial planar technology for consistent performance in high-speed digital and analog switching environments.
Replacement Considerations
The datasheet notes that the related DAP222T1G variant is discontinued. Consult onsemi representatives for current alternative recommendations or updated design-in support for existing projects requiring this specific switching diode configuration.
