NSVEMX1DXV6T1G

Overview

The NSVEMX1DXV6T1G is a dual NPN bipolar junction transistor (BJT) manufactured by onsemi. It features a silicon technology construction housed in an SOT-563-6 surface-mount package. The device supports a maximum continuous collector current of 100 mA and operates with a collector-emitter voltage (VCEO) of 50 V, while the collector-base voltage (VCBO) reaches 60 V. The emitter-base breakdown voltage (VEBO) is rated at 7 V. Key electrical characteristics include a DC current gain (hFE) minimum of 120, a transition frequency (fT) of 180 MHz, and a collector-emitter saturation voltage of 400 mV. Power dissipation is limited to 357 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

• Dual NPN configuration within a compact SOT-563-6 surface-mount package for space-constrained designs.
• High thermal stability supporting operation up to +150°C junction temperature.
• General-purpose switching capability with defined saturation voltage and current gain specifications.

Applications

• General-purpose signal switching circuits
• Low-power amplifier stages
• Digital logic interface buffers

Procurement Notes

Verify the complete part number including the NSV prefix against official onsemi documentation to ensure correct revision and tape-and-reel packaging specifications. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Cross-reference the datasheet revision date to ensure alignment with current manufacturing standards before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN topology is required in a small outline package. Ensure the circuit design stays within the 50 V collector-emitter and 60 V collector-base voltage limits. Verify that the total power dissipation does not exceed 357 mW under worst-case thermal conditions. Check that the required current gain meets or exceeds the minimum hFE value specified in the datasheet for the intended operating current.

Part Context

This device belongs to the EMX1 series of dual transistors from onsemi. The series provides matched pairs in a single package to improve board space efficiency and thermal tracking compared to discrete components. The NSV prefix typically indicates specific automotive or enhanced quality screening variants within the broader product line.

Replacement Considerations

Direct replacements must match the SOT-563-6 footprint and dual NPN configuration. Verify that substitute parts meet or exceed the 50 V VCEO, 100 mA IC, and 357 mW Pd ratings. Ensure the replacement offers comparable hFE and fT performance to maintain circuit stability without redesigning bias networks.