NSVF4015SG4T1G

Overview

The onsemi NSVF4015SG4T1G is an NPN silicon RF bipolar junction transistor designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 12 V and supports a continuous DC collector current of 100 mA. The device features a transition frequency of 1 GHz and a maximum power dissipation of 450 mW. Packaged in the compact SC-82FL surface-mount format, it includes four pins within dimensions of 2 x 1.6 x 0.85 mm. The component is qualified to AEC-Q101 standards and functions reliably across a temperature range of -55 °C to +150 °C.

Feature Summary

• AEC-Q101 automotive grade qualification ensures reliability in demanding environments.
• SC-82FL surface-mount package provides a compact footprint for space-constrained designs.
• Silicon NPN construction optimized for radio frequency signal processing.

Applications

• Automotive radar systems requiring robust RF components
• High-frequency communication circuits
• RF amplification stages in consumer electronics

Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm pinout and electrical characteristics match design requirements. Confirm RoHS compliance status and REACH declarations prior to integration. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage during assembly processes.

Selection Notes

Select this component when a 12 V breakdown voltage and 100 mA current capacity are required for RF applications. Compare transition frequency specifications against system bandwidth needs. Evaluate thermal management capabilities given the 450 mW power dissipation limit in the small SC-82FL package.

Part Context

This part belongs to the NSVF series of RF transistors from onsemi. It shares the SC-82FL package form factor with other devices in the lineup but differs in voltage ratings and frequency performance. The series targets integrated solutions for wireless infrastructure and automotive sensing markets.

Replacement Considerations

NSVF4017SG4T1G is a confirmed substitute offering higher frequency operation at 10 GHz while maintaining similar voltage and current ratings.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

Is this transistor suitable for automotive applications?

Yes, it is qualified to AEC-Q101 standards for automotive use.

What is the typical noise figure at 1 GHz?

The typical noise figure is 1.2 dB at 1 GHz.