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The NSVF6003SB6T1G is an NPN silicon RF bipolar junction transistor manufactured by onsemi. It operates at a maximum frequency of 7 GHz with a transition frequency (fT) of 7 GHz. The device supports a continuous collector current of 150 mA and dissipates up to 800 mW of power. Key voltage ratings include a collector-emitter breakdown voltage (VCEO) of 12 V, a collector-base voltage (VCBO) of 20 V, and an emitter-base voltage (VEBO) of 2 V. It features a minimum DC current gain (hFE) of 100. Packaged in the CPH-6 surface-mount format, it is AEC-Q101 qualified for automotive applications.
Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm that the specific ordering suffix matches the required package and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any end-of-life notices regarding production status before finalizing procurement plans.
Select this component when designing circuits requiring high-speed switching or amplification within the 7 GHz range. Consider the 12 V collector-emitter voltage limit and 150 mA current capacity during biasing calculations. The CPH-6 package requires appropriate thermal management strategies to handle the 800 mW power dissipation rating effectively.
This part belongs to the NSVF6003SB6 series of RF bipolar transistors from onsemi. It is specifically engineered for high-frequency performance in compact form factors. The series targets demanding RF environments where signal integrity and speed are critical parameters for system functionality.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps if considering alternative manufacturers' components for redesign purposes.