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Product Detailed Parameters
- Description：JFET N-CH 25V 50MA 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：20 mA @ 5 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：600 mV @ 100 µA
- Input Capacitance (Ciss) (Max) @ Vds：6pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：400 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：3-CPH
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NSVJ3910SB3T1G is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in the CPH-3 surface-mount package. The device features a drain-source breakdown voltage of 25 V and supports a continuous drain current of 50 mA, with a power dissipation rating of 400 mW. It operates within a temperature range of -55°C to +150°C. The component holds AEC-Q101 qualification and PPAP capability for automotive applications.
Feature Summary
- High forward transfer admittance enabling efficient radio wave reception in compact designs
- Low noise figure suitable for sensitive signal amplification
- High ESD tolerance compared to standard JFETs
- AEC-Q101 qualified and PPAP capable for automotive integration
Applications
- Low noise amplifiers (LNA)
- Automotive AM radio systems
- Automotive FM radio systems
Procurement Notes
Verify the NRND status before design finalization, as this indicates the component is not recommended for new designs. Confirm AEC-Q101 qualification requirements against specific project standards. Ensure the CPH-3 package dimensions align with PCB layout constraints. Validate thermal management capabilities given the 400 mW dissipation limit. Check for any recent product change notices affecting material composition or reliability data.
Selection Notes
Select this component when designing low-noise front-end stages for automotive radio receivers requiring high gain and small form factors. The CPH-3 package offers a compact footprint suitable for space-constrained automotive electronics. Consider the 25 V breakdown voltage for appropriate biasing schemes. Evaluate the -55°C to +150°C operating range against environmental conditions. Verify compatibility with existing LNA architectures utilizing N-channel JFETs.
Part Context
This part belongs to the NSVJ3910SB3 series of single N-channel JFETs designed for automotive audio applications. It is distinct from bipolar transistors like the NSVS50031SB3T1G due to its field-effect operation and low-noise characteristics. The CPH-3 package differentiates it from larger through-hole or standard SMD packages used in other transistor families.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official onsemi resources for potential alternatives or consider redesigning if the NRND status poses supply risks.
