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Product Detailed Parameters
- Description：JFET 2N-CH 15V 50MA SC88AFL/MCPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：15 V
- Drain to Source Voltage (Vdss)：15 V
- Current - Drain (Idss) @ Vds (Vgs=0)：10 mA @ 5 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：300 mV @ 100 µA
- Input Capacitance (Ciss) (Max) @ Vds：10.5pF @ 5V (Typ)
- Resistance - RDS(On)：-
- Power - Max：300 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：5-SMD, Flat Leads
- Supplier Device Package：SC-88AFL/MCPH5
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NSVJ5908DSG5T1G is a dual N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a maximum drain-source voltage of 15 V and a continuous drain current of 50 mA. The device has a power dissipation rating of 300 mW and operates within a junction temperature range of -55°C to 150°C. Input capacitance is typically 10.5 pF at 5 V, with a gate-source breakdown voltage of 15 V. The part is housed in an SC-88AFL/MCPH5 surface-mount package and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Dual N-channel configuration for integrated circuit applications
- Automotive-grade reliability compliant with AEC-Q101 standards
- Low input capacitance suitable for high-frequency signal processing
- Wide operating temperature range for harsh environments
Applications
- Automotive sensor interface circuits
- High-impedance analog signal switching
- Low-noise preamplifier stages
- Impedance matching networks in instrumentation
Procurement Notes
Verify the complete part number including suffixes against official onsemi documentation to ensure correct packaging and automotive grade specifications. Confirm RoHS compliance status and material declarations prior to integration. Cross-reference datasheet revisions to validate electrical parameters match design requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines specified in the manufacturing data.
Selection Notes
Select this component when dual N-channel JFET functionality is required in compact surface-mount formats. The 15 V breakdown voltage limits suitability for higher voltage applications. Consider the 50 mA current limit for load driving capabilities. The SC-88AFL package offers space efficiency compared to larger transistor packages. Verify thermal management needs against the 300 mW power dissipation rating under expected operating conditions.
Part Context
This device belongs to the NSVJ5908 series of dual JFETs from onsemi. It is designed specifically for automotive electronics requiring robust performance and small footprint. The part integrates two independent N-channel JFETs into a single package, reducing board space and simplifying assembly processes for complex analog front-end designs.
Replacement Considerations
Consult official onsemi substitution guides for verified alternatives. Generic JFET replacements may not match AEC-Q101 automotive qualifications or specific pinout configurations. Verify electrical parameter overlaps before considering cross-brand substitutes.
