NSVMMBT6520LT1G

Single Bipolar Transistors Overview

The NSVMMBT6520LT1G is a PNP silicon high voltage transistor in an SOT-23 package. It features a collector-emitter voltage of -350 Vdc and continuous collector current of -500 mAdc. The device has a total device dissipation of 225 mW on an FR-5 board and operates within a junction temperature range of -55 to +150 °C. It is AEC-Q101 qualified with a gain-bandwidth product up to 200 MHz.

Single Bipolar Transistors Feature Summary

• High voltage capability with -350 V collector-emitter breakdown
• Automotive qualification via AEC-Q101 standard
• Lead-free and halogen-free construction

Single Bipolar Transistors Applications

• Automotive electronic circuits requiring unique site control
• High voltage switching applications
• General purpose PNP transistor stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix LT1G against official documentation to confirm package type and shipping configuration. Confirm AEC-Q101 qualification status for automotive compliance requirements. Check for discontinuation notices as the base MMBT6520L series may be restricted for new designs. Ensure thermal management aligns with the specified 225 mW dissipation limit on standard FR-5 boards.

Single Bipolar Transistors Selection Notes

Select this component for applications demanding high voltage isolation in a compact surface-mount footprint. The PNP configuration suits negative rail switching or level shifting tasks. Verify that the -500 mA current rating meets load requirements. Consider the thermal resistance characteristics when designing heat dissipation paths for sustained operation near maximum ratings.

Single Bipolar Transistors Part Context

This part belongs to the MMBT6520L family of high voltage PNP transistors manufactured by onsemi. The NSV prefix indicates automotive-grade manufacturing with specific site and control change protocols. It shares the same electrical specifications as the standard MMBT6520LT1G but adheres to stricter automotive quality standards.

Single Bipolar Transistors Replacement Considerations

MMBT6520LT1G

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is -350 Vdc.

Is this transistor suitable for automotive applications?

Yes, it is AEC-Q101 qualified and carries the NSV prefix for automotive and other applications requiring unique site and control change requirements.

What is the DC current gain range at low currents?

At IC = -1.0 mA and VCE = -10 V, the DC current gain (hFE) ranges from a minimum of 20 to a maximum of 200.