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The NSVMMBTH81LT1G is a PNP digital transistor from onsemi, integrated within the MMUN2136L series. It features a single NPN/PNP configuration housed in an SOT-23-3 surface-mount package. The device includes a typical internal base resistor of 100 kOhms with a standard resistance ratio of 1. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Power dissipation is rated at 246 mW. It operates across a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive reliability.
Verify the specific ordering suffix against official documentation to confirm tape-and-reel packaging quantities and lead times. Ensure compatibility with automated pick-and-place equipment requirements for the SOT-23-3 footprint. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement orders.
Select this component when a PNP digital switch with integrated biasing is required. The 100 kOhm internal resistor value dictates the input drive characteristics. Verify that the -50 V voltage rating and -100 mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the MMUN2136L series of onsemi digital transistors. These devices combine bipolar junction transistors with onboard resistors to replace multiple discrete components. The series is designed for low-power switching and logic level translation tasks in consumer and industrial electronics.
Check for direct pin-compatible substitutes within the same MMUN2136L family or equivalent PNP digital transistors from other manufacturers. Ensure replacement parts match the SOT-23-3 package dimensions and thermal characteristics.