NSVMMBTH81LT3G

$0.32

Description：RF TRANS PNP 20V 600MHZ SOT-23-3
Series：-

SKU:50a2adf19632 Category: Bipolar RF Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：RF TRANS PNP 20V 600MHZ SOT-23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Voltage - Collector Emitter Breakdown (Max)：20V
Frequency - Transition：600MHz
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：225mW
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 10V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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NSVMMBTH81LT3G

Overview

The NSVMMBTH81LT3G is a PNP RF transistor from the MMBTH81 series, designed for general RF amplifier and mixer applications up to 250 MHz. It operates with collector currents between 1.0 mA and 30 mA. Key electrical parameters include a collector-emitter breakdown voltage of 20 V, a DC current gain (hFE) of 60 at 5.0 mA, and a transition frequency (fT) of 600 MHz. The device features low capacitance values, specifically 0.85 pF for Ccb and 0.65 pF for Cce. It is housed in an SOT-23 package and supports an operating junction temperature range from -55 °C to +150 °C.

Feature Summary

Qualified for automotive and other applications requiring unique site and control change requirements under AEC-Q101 standards.
Designed for high-frequency performance suitable for RF amplifier and mixer circuits up to 250 MHz.
Manufactured using Process 75 technology to ensure specific reliability characteristics.

Applications

General RF amplifier circuits
RF mixer applications
Automotive electronic systems

Procurement Notes

Verify that the ordering suffix LT3G corresponds to the 10,000-unit tape and reel packaging configuration. Confirm the presence of the NSV prefix indicates compliance with automotive-specific site and control change requirements. Ensure the component meets AEC-Q101 qualification standards for the intended application environment.

Selection Notes

Select this component when designing circuits requiring a PNP transistor with a 20 V collector-emitter voltage rating and operation up to 250 MHz. Consider the 225 mW total device dissipation and thermal resistance of 556 °C/W for heat management. Verify compatibility with the required collector current range of 1.0 mA to 30 mA for optimal performance.

Part Context

This part belongs to the MMBTH81 series of PNP RF transistors manufactured by onsemi. The series is sourced from Process 75 and is available in the SOT-23 package. The NSV prefix denotes variants qualified for automotive applications, distinguishing them from standard commercial versions.