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Product Detailed Parameters
- Description：TRANS 2PNP 30V 100MA SOT-563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：500mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
Download product information
Overview
The NSVT30010MXV6T1G is a dual PNP small-signal transistor manufactured by onsemi. It features a maximum collector current of 0.1 A and a collector-emitter voltage rating of 30 V. The device utilizes a 6-pin SOT-563 (R-PDSO-F6) surface-mount package. Key electrical characteristics include a minimum DC current gain (hFE) of 420 and a maximum operating temperature of 150 °C. The component is constructed from silicon and is lead-free compliant.
Feature Summary
- Dual PNP configuration within a compact surface-mount footprint
- High DC current gain for efficient signal amplification
- Designed for low-voltage switching applications
Applications
- Low voltage switching circuits
- Signal amplification stages
- General-purpose discrete semiconductor applications
Procurement Notes
Verify the exact part number against official manufacturer documentation, as the provided knowledge base primarily references the NST30010MXV6T1G variant. Confirm package type and electrical ratings match design requirements before procurement. Ensure compliance with RoHS standards and check for specific automotive or industrial qualification if required by the application environment.
Selection Notes
Select this component for applications requiring dual PNP transistors in a small outline package. Compare hFE minimums and voltage ratings against circuit demands. Consider thermal management capabilities given the 150 °C maximum junction temperature. Verify pinout compatibility with existing PCB layouts when substituting similar dual transistor packages.
Part Context
This component belongs to onsemi's lineup of small-signal bipolar junction transistors. It shares the SOT-563 package form factor with other dual transistor variants in the series. The product line focuses on providing high-gain, low-current solutions for space-constrained electronic designs requiring reliable PNP switching performance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with the NST30010MXV6T1G only if datasheet parameters and pin configurations are verified identical by the manufacturer.
