NSVT65011MW6T1G

$0.40

Description：TRANS 2NPN 65V 100MA SC88/SC70
Series：-

SKU:2a1b2b6605f9 Category: Bipolar Transistor Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN 65V 100MA SC88/SC70
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 NPN (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：65V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
Power - Max：380mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-88/SC70-6/SOT-363
Grade：-
Qualification：-

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NSVT65011MW6T1G

Overview

The onsemi NSVT65011MW6T1G is a dual matched general purpose NPN transistor housed in an ultra-small SOT-363 package. It features a collector-emitter voltage (VCEO) of 65 V, a collector-base voltage (VCBO) of 80 V, and a continuous collector current (IC) of 100 mA dc. The device offers a current-gain bandwidth product (fT) of 100 MHz at IC = 10 mA and VCE = 5 V. Current gain matching is specified to 10%, with base-emitter voltage matched to 2 mV.

Feature Summary

Dual matched NPN transistors designed for portable products
Eliminates the need for costly trimming through parameter matching
AEC-Q101 qualified and PPAP capable for automotive applications

Applications

Current Mirrors
Differential, Sense and Balanced Amplifiers
Mixers
Detectors and Limiters

Procurement Notes

Verify that the ordering suffix T1G corresponds to the Tape & Reel packaging configuration containing 3,000 units per reel. Confirm that the NSV prefix indicates compliance with unique site and control change requirements necessary for automotive and other specific applications requiring AEC-Q101 qualification and PPAP capability.

Selection Notes

Select this component when a compact dual matched NPN pair is required for portable designs. It serves as a drop-in replacement for standard devices while providing inherent parameter matching. Ensure the application operates within the 65 V collector-emitter voltage limit and 100 mA continuous collector current constraints defined in the maximum ratings.

Part Context

This part belongs to the NST65011MW6 series of dual matched general purpose transistors. It is specifically the NPN variant, whereas the complementary PNP equivalent is available as the NST65010MW6T1G. Both are housed in the same SOT-363 package to facilitate space-constrained circuit layouts.

Replacement Considerations

NST65010MW6T1G

FAQ

What is the base-emitter voltage matching specification?

The base-emitter voltage is matched to 2 mV between the two transistors within the package.

Is this component suitable for automotive applications?

Yes, the NSV prefix indicates it is AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.