NTCR013N120M3S

$25.78

Description：WAFER DIE
Series：-
Mfr：onsemi
Package：Tray

SKU:345e16e994eb Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTCR013N120M3S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is WAFER DIE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTCR013N120M3S

Description：WAFER DIE
Series：-
Mfr：onsemi
Package：Tray
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：20mOhm @ 75A, 18V
Vgs(th) (Max) @ Id：4.4V @ 37mA
Gate Charge (Qg) (Max) @ Vgs：254 nC @ 18 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：5813 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

Single FETs, MOSFETs datasheet and documents for NTCR013N120M3S

NTCR013N120M3S

Single FETs, MOSFETs Overview

The NTCR013N120M3S is a bare die Silicon Carbide (SiC) MOSFET from onsemi's EliteSiC M3S series. It features an N-channel configuration with a drain-to-source breakdown voltage of 1200 V and a typical on-resistance of 13 mΩ at VGS = 18 V. The device supports a maximum continuous drain current of 151 A and includes an integrated body diode rated for 151 A forward current. Key electrical parameters include a total gate charge of 254 nC, turn-on switching loss of 563 µJ, and turn-off switching loss of 390 µJ under standard test conditions.

Single FETs, MOSFETs Feature Summary

Utilizes EliteSiC M3S technology to deliver superior switching performance and high reliability compared to traditional silicon devices.
Features low ON resistance and compact chip size to ensure low capacitance and gate charge, resulting in reduced EMI and system size.
Includes an integrated source-drain diode with optimized reverse recovery characteristics for efficient operation in hard-switching applications.

Single FETs, MOSFETs Applications

Solar Inverters
Electric Vehicle Charging Stations
Uninterruptible Power Supplies (UPS)
Energy Storage Systems
Switch Mode Power Supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

This component is supplied as a bare die on wafer sawn-on-film, not in a standard package. Verify that your assembly process supports direct die attachment and wire bonding. Ensure compatibility with the specified metallization layers: top Al/Si/Cu and back Ti/NiV/Ag. Thermal management design must account for the junction-to-case thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this part when high power density and efficiency are critical. The 13 mΩ RDS(on) at 18 V gate drive offers low conduction losses. Consider the 1200 V rating for high-voltage systems. Evaluate the switching losses against your operating frequency requirements. Ensure your gate driver can support the recommended -3 V to +18 V swing for optimal performance.

Single FETs, MOSFETs Part Context

This die belongs to the EliteSiC M3S family, representing advanced silicon carbide technology. It is designed for high-frequency, high-temperature environments where silicon limitations are prohibitive. The bare die format allows system integrators to customize packaging and thermal solutions directly.

Single FETs, MOSFETs Replacement Considerations

Refer to the NTH4L013N120M3S product datasheet for packaged equivalents with identical electrical characteristics. Other M3S series dies may offer different RDS(on) ratings but share similar technological foundations.