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NTCR015N065SC1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is NTCR015N065SC1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTCR015N065SC1
- Description：NTCR015N065SC1
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for NTCR015N065SC1
Single FETs, MOSFETs Overview
The NTHL015N065SC1 is a silicon carbide (SiC) MOSFET from onsemi's EliteSiC series, packaged in a TO-247-3 leaded format. It features an N-channel enhancement mode configuration with a drain-source breakdown voltage of 650 V and a continuous drain current rating of 163 A. The device exhibits a maximum on-resistance of 18 mΩ at 25°C. Gate specifications include a threshold voltage of 4.3 V and a total gate charge of 283 nC. Thermal performance supports operation up to +175°C junction temperature with a power dissipation capacity of 643 W.
Single FETs, MOSFETs Feature Summary
- Utilizes silicon carbide technology for high thermal stability and efficiency
- Designed for low conduction losses via optimized on-resistance characteristics
- Robust packaging suitable for through-hole mounting applications
Single FETs, MOSFETs Applications
- High-frequency power conversion systems
- Industrial motor drive inverters
- Uninterruptible power supply (UPS) units
Single FETs, MOSFETs Procurement Notes
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the suffix matches the specific electrical ratings and package type required for your design. Ensure compliance with RoHS and REACH directives as specified in the latest datasheet. Cross-reference ordering information directly with authorized distributors to avoid counterfeit components.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage handling and efficient thermal management. Evaluate the gate charge and switching times against your driver capabilities to ensure optimal performance. Consider the thermal resistance and package limitations when designing heat sinks for high-power environments. Verify that the application voltage and current stresses remain within the specified safe operating area.
Single FETs, MOSFETs Part Context
This device belongs to onsemi's EliteSiC family of wide-bandgap semiconductors. These components are engineered to replace traditional silicon MOSFETs in demanding power electronics applications. The series offers improved efficiency and reduced system size due to higher switching frequencies and lower losses compared to conventional technologies.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
