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NTD12N10T4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 12A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTD12N10T4G
- Description：MOSFET N-CH 100V 12A DPAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：550 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.28W (Ta), 56.6W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for NTD12N10T4G
Single FETs, MOSFETs Overview
The NTD12N10T4G is a single N-channel silicon power MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 100 V and a continuous drain current of 12 A at 25°C. The device exhibits a maximum on-resistance of 0.165 Ω. It is housed in a lead-free DPAK-3 package (CASE 369C-01) with the case connected to the drain. The component is specified for enhancement mode operation and includes a built-in diode.
Single FETs, MOSFETs Feature Summary
- Utilizes Neutron Transmutation Doped (NTD) silicon technology for enhanced material uniformity and stability under high power conditions.
- Features a rugged avalanche energy rating of 75 mJ, supporting robust performance in inductive switching applications.
- Integrates a body diode characterized for use in bridge circuits, providing fast but soft recovery characteristics.
Single FETs, MOSFETs Applications
- General purpose power supplies
- Inductive load control
- PWM motor controls
Single FETs, MOSFETs Procurement Notes
Verify the specific manufacturer designation when sourcing, as the part number appears in databases associated with Rochester Electronics and other distributors. Confirm that the received component matches the CASE 369C-01 DPAK-3 package outline. Ensure compliance with RoHS standards if required by the design specification. Cross-reference the datasheet revision date to confirm parameter consistency.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 100V N-channel MOSFET with moderate current handling capabilities. The low on-resistance supports efficient power conversion. Consider the thermal performance within the DPAK package for the expected power dissipation levels. Verify that the 75 mJ avalanche energy rating meets the circuit's transient requirements.
Single FETs, MOSFETs Part Context
This device belongs to the NTD series from onsemi, which utilizes neutron transmutation doping to improve crystal quality. This manufacturing technique enhances the reliability of power devices operating at high voltages and currents. The NTD12N10T4G serves as a general-purpose solution for various power electronics applications requiring stable N-channel performance.
Single FETs, MOSFETs Replacement Considerations
The MTD20N03L is noted as a replacement in many applications within the same product family lineage, though voltage and current ratings differ. Verify pinout compatibility and electrical specifications before substituting with other N-channel MOSFETs in the DPAK package.
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