Single FETs, MOSFETs NTD3055L104T4G product image

NTD3055L104T4G

$0.96
  • Description:MOSFET N-CH 60V 12A DPAK
  • Series:*
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:2bd653aa592a Category: Brand:

  
  • Quantity
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NTD3055L104T4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N-CH 60V 12A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTD3055L104T4G

  • Description:MOSFET N-CH 60V 12A DPAK
  • Series:*
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for NTD3055L104T4G

NTD3055L104T4G

Single FETs, MOSFETs Overview

The NTD3055L104T4G is a 60V N-Channel MOSFET in a TO-252 package. It supports a continuous drain current of 12A at 25°C and a single pulse current of 45A. The on-resistance is 104mΩ max at VGS=5V and ID=6A. Gate threshold voltage ranges from 1.0V to 4.2V. Total power dissipation is 48W at 25°C case temperature. Operating junction temperature spans -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Lower RDS(on) for improved efficiency
  • Lower VDS(on) characteristics
  • Tighter VSD specification
  • Lower diode reverse recovery time and stored charge

Single FETs, MOSFETs Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation matches UMW or UTD Semiconductor Co., Limited, as the model number is widely associated with other vendors like onsemi. Confirm the package type is TO-252 (DPAK). Ensure the ordering suffix T4G corresponds to tape and reel packaging with a base quantity of 2500 units. Cross-reference electrical limits against the specific datasheet provided by the supplier.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 60V breakdown voltage and up to 12A continuous current. The device is suitable for circuits needing low gate charge and fast switching speeds. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the drive voltage meets the 5V requirement for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the NTD3055 series of N-Channel Power MOSFETs. These devices are designed for general-purpose power switching applications. The series typically features optimized gate charge and low on-resistance to enhance system efficiency. The TO-252 package provides a balance between power handling capability and surface-mount convenience.

Single FETs, MOSFETs Replacement Considerations

NTD3055L104T4GOS

Single FETs, MOSFETs FAQ

What is the maximum avalanche energy rating?

The single pulse drain-to-source avalanche energy is rated at 61 mJ, starting at a junction temperature of 25°C.

How does the on-resistance vary with temperature?

The on-resistance exhibits a positive temperature coefficient, increasing as the junction temperature rises from -55°C to +175°C.

NTD3055L104T4GNTD3055L104T4G
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